 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5088/D Amplifier Transistors NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N5088 2N5089 1 2 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N508 8 30 35 3.0 50 625 5.0 1.5 12 - 55 to +150 2N508 9 25 30 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 15 Vdc, IE = 0) Emitter Cutoff Current (VEB(off) = 3.0 Vdc, IC = 0) (VEB(off) = 4.5 Vdc, IC = 0) 1. RJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO 2N5088 2N5089 V(BR)CBO 2N5088 2N5089 ICBO 2N5088 2N5089 IEBO -- -- 50 100 -- -- 50 50 nAdc 35 30 -- -- nAdc 30 25 -- -- Vdc Vdc Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996 1 2N5088 2N5089 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) hFE 2N5088 2N5089 2N5088 2N5089 2N5088 2N5089 VCE(sat) VBE(on) 300 400 350 450 300 400 -- -- 900 1200 -- -- -- -- 0.5 0.8 Vdc Vdc -- (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(2) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base - Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc)(2) SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 100 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 2N5088 2N5089 NF 2N5088 2N5089 -- -- 3.0 2.0 fT Ccb Ceb hfe 350 450 1400 1800 dB 50 -- -- -- 4.0 10 MHz pF pF -- RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5088 2N5089 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) NOISE VOLTAGE 30 BANDWIDTH = 1.0 Hz 20 en , NOISE VOLTAGE (nV) en , NOISE VOLTAGE (nV) IC = 10 mA 3.0 mA 1.0 mA RS 0 20 RS 0 f = 10 Hz 10 7.0 10 kHz 5.0 1.0 kHz 100 Hz 30 BANDWIDTH = 1.0 Hz 10 7.0 5.0 300 A 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 100 kHz 5.0 10 Figure 2. Effects of Frequency 10 7.0 5.0 In, NOISE CURRENT (pA) 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 10 RS 0 20 10 A 50 100 200 3.0 mA 1.0 mA 300 A 100 A 30 A 0 10 20 20 16 NF, NOISE FIGURE (dB) Figure 3. Effects of Collector Current BANDWIDTH = 1.0 Hz IC = 10 mA BANDWIDTH = 10 Hz to 15.7 kHz 12 500 A 100 A 4.0 10 A IC = 1.0 mA 8.0 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k f, FREQUENCY (Hz) 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 4. Noise Current 100 Hz NOISE DATA 300 200 VT, TOTAL NOISE VOLTAGE (nV) 100 70 50 30 20 10 7.0 5.0 3.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 20 BANDWIDTH = 1.0 Hz 100 A 3.0 mA 1.0 mA 300 A 30 A 10 A IC = 10 mA 16 NF, NOISE FIGURE (dB) Figure 5. Wideband Noise Figure IC = 10 mA 3.0 mA 1.0 mA 300 A 12 8.0 100 A 4.0 BANDWIDTH = 1.0 Hz 0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) 30 A 10 A Figure 6. Total Noise Voltage Figure 7. Noise Figure Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 2N5088 2N5089 h FE, DC CURRENT GAIN (NORMALIZED) 4.0 3.0 VCE = 5.0 V 2.0 TA = 125C 25C 1.0 0.7 0.5 0.4 0.3 0.2 0.01 - 55C 0.02 0.03 0.05 0.1 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) 1.0 2.0 3.0 5.0 10 Figure 8. DC Current Gain 1.0 TJ = 25C 0.8 V, VOLTAGE (VOLTS) RVBE, BASE-EMITTER TEMPERATURE COEFFICIENT (mV/ C) - 0.4 - 0.8 0.6 VBE @ VCE = 5.0 V - 1.2 0.4 - 1.6 TJ = 25C to 125C 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 - 2.0 - 55C to 25C - 2.4 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 20 50 100 Figure 9. "On" Voltages f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 10. Temperature Coefficients 8.0 6.0 C, CAPACITANCE (pF) 4.0 3.0 2.0 Cob Ccb Ceb Cib TJ = 25C 500 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 VCE = 5.0 V TJ = 25C 1.0 0.8 0.1 0.2 1.0 2.0 5.0 0.5 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 11. Capacitance Figure 12. Current-Gain -- Bandwidth Product 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5088 2N5089 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 2N5088 2N5089 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data *2N5088/D* 2N5088/D |
Price & Availability of 2N5088
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |